METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor device is provided to decrease a leakage current of a semiconductor device by removing a carrier using a lower portion of a wafer. CONSTITUTION: A wafer is depth-etched and a semiconductor is manufactured on the wafer.A rear surface of the wafer is performed by an abrasion process. The wafer which is performed by abrasion process is performed by a heat processing process. The process which performs the depth etching process is a process for forming a trench isolation. The process for completing the semiconductor device forms a last metal wire in a manufacturing line, performs a thermal processing of the wafer, and performing a polyimide process for protecting the semiconductor device.