MANUFACTURING METHOD OF A THIN FILM TRANSISTOR

摘要

PURPOSE: A manufacturing method of a TFT(Thin Film Transistor) is provided which improves a characteristic of the TFT for use in an LCD(Liquid Crystal Display). CONSTITUTION: A manufacturing method of a TFT(Thin Film Transistor) comprises the steps of: forming a gate electrode on a substrate; forming a gate insulation layer covering the gate electrode; forming an amorphous silicon layer on the gate insulation layer on the gate electrode; forming a doped amorphous silicon layer on the amorphous silicon layer; forming a source and a drain electrodes on the doped amorphous silicon layer; and dry-etching the doped amorphous silicon layer with HCl plus CF4 plus O2 gas by using the source and the drain electrodes as a mask.