| 摘要 |
<p>A laser plasma X-ray generator which has a high X-ray conversion efficiency and produces little debris, a semiconductor aligner using the generator and a semiconductor exposure method are disclosed. In the laser plasma X-ray generator, the target to be irradiated with a laser beam is a metal oxide. The semiconductor aligner comprising such a laser plasma X-ray generator is characterized by further comprising a collecting mirror which directs X-rays generated by the plasma X-ray generator to a mask, and an X-ray convergence exposure mirror which converges the X-rays reflected by the mask and projects the X-rays onto a semiconductor wafer. In the semiconductor exposure method, X-rays generated by a laser plasma X-ray generator where the target is a metal oxide are collected, applied to a mask, and reflected by the mask, the reflected X-rays are converged, and a semiconductor mask pattern is projected onto a semiconductor wafer to expose it.</p> |
