发明名称 SEMICONDUCTOR CHIP HAVING SOLDER BUMP AND FABRICATION METHOD FOR THE SAME
摘要 <p>PURPOSE: A semiconductor chip(20) has a solder bump(17) where a diffusion barrier layer(ball limiting metallurgy or under bump metal) not generating a compound between a solder bump and a metal but maintaining a strong bonding force is formed. CONSTITUTION: A solder bump is formed on top of an aluminum pad(11) in order to be appropriate for mounting the semiconductor chip by a flip chip bonding. The semiconductor chip has a silicon substrate(10) where the aluminum pad is formed; a passivation layer(12) formed on top of the silicon substrate; a diffusion barrier layer(16) formed by stacking an aluminum layer(13), a nickel layer(14) and a palladium layer(15); and the solder bump formed on top of the diffusion barrier layer. The method prevents the generation of a crack by reducing the generation of an inter-metallic compound between the diffusion barrier layer and the solder bump, and can improve the reliability of the semiconductor chip because the binding force with the solder bump is increased using the palladium.</p>
申请公布号 KR20000019151(A) 申请公布日期 2000.04.06
申请号 KR19980037105 申请日期 1998.09.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUNG HO
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址