| 摘要 |
PURPOSE: A manufacturing method of an NVM(Non Volatile Memory) device is provided to decrease a memory cell size and secure high program efficiency without an additional process. CONSTITUTION: A manufacturing method of an NVM(Non Volatile Memory) device comprises the steps of: forming a floating gate on a gate insulation layer on a semiconductor substrate having a first conductivity; forming an interlayer dielectric layer on the floating gate; forming a control gate on the interlayer insulation layer; forming a source within the substrate under one end of the floating gate, a predetermined portion of the source being overlapped with the floating gate; forming a drain within the substrate under the other end of the floating gate, a predetermined portion of the drain being overlapped with the floating gate; and forming a first conductive impurity doping region having higher impurity density than the substrate in a region between the source and the substrate, a region between the drain and the substrate, the a channel region.
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