| 摘要 |
<p>A single crystal material (11) is subjected to hot isotropic pressure pressurization under a stabilized atmosphere of the single crystal material (11), at a pressure of 0.2 to 304 MPa, at a temperature not lower than 0.85 times the melting point according to an absolute temperature of the material (11) and for 5 min to 20 hr, and then is gradually cooled. The stabilized atmosphere of the material (11) is preferably an inactive gas atmosphere or a high-steam-pressure element vapor-containing atsmophere. The pressure is preferably 10 to 200 MPa. The material (11) is an ingot of Silicon, GaAs, InP, ZnS or ZnSe single crystal, or may be a block or wafer obtained by cutting the ingot. The above method can eliminate or disperse lattice defects such as hole type grow-in defects existing not only on the surface of but inside the material (11) independently of the size of the material (11).</p> |
