CHARGE COUPLED DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method of fabricating a charge coupled device is provided to simplify a process and enhance flatness by forming a first and a second transfer gates on the identical plane. CONSTITUTION: A method of fabricating a charge coupled device comprises the steps of implanting a first conductive impurity ion into a predetermined position of a first conductive semiconductor substrate to form a charge transfer region which is long toward an X-direction, implanting the first conductive impurity ion into between the charge transfer region and a charge transfer region adjacent thereto to form a photoelectric converting region, forming a gate insulating layer on the semiconductor substrate, simultaneously forming a first and a second transfer gates which is long toward a Y-direction with a distance, and forming an interlayer insulating film on the first and the second transfer gates and then forming a third transfer gate which is patterned toward the Y-direction.