发明名称 SEMICONDUCTOR ELEMENT AND A MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A manufacturing method of a semiconductor element is provided to improve an overlay margin between a bit line contact hole and a plug layer. CONSTITUTION: A manufacturing method of a semiconductor element comprises: a semiconductor substrate on which a plurality of word lines formed; a first insulation layer having a plug contact hole between the word lines on the substrate including the word lines; a plug layer formed in and on the plug contact hole as a unity; second insulation layer side walls on both sides of the plug layer on the first insulation layer; a third insulation layer having a bit line contact hole formed on a portion of the plug layer including the second insulation layer side walls on the entire surface; and a bit line formed on the bit line contact hole and the third insulation layer adjacent to the bit line contact hole.
申请公布号 KR20000018349(A) 申请公布日期 2000.04.06
申请号 KR19980035906 申请日期 1998.09.01
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 NAM, YONG U
分类号 H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L27/105
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