发明名称 |
SEMICONDUCTOR ELEMENT AND A MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A manufacturing method of a semiconductor element is provided to improve an overlay margin between a bit line contact hole and a plug layer. CONSTITUTION: A manufacturing method of a semiconductor element comprises: a semiconductor substrate on which a plurality of word lines formed; a first insulation layer having a plug contact hole between the word lines on the substrate including the word lines; a plug layer formed in and on the plug contact hole as a unity; second insulation layer side walls on both sides of the plug layer on the first insulation layer; a third insulation layer having a bit line contact hole formed on a portion of the plug layer including the second insulation layer side walls on the entire surface; and a bit line formed on the bit line contact hole and the third insulation layer adjacent to the bit line contact hole.
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申请公布号 |
KR20000018349(A) |
申请公布日期 |
2000.04.06 |
申请号 |
KR19980035906 |
申请日期 |
1998.09.01 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
NAM, YONG U |
分类号 |
H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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