发明名称 PTC THERMISTOR AND VARISTOR COMPLEX ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A PTC thermistor and varistor complex element and a method for manufacturing the same are provided to form simultaneously a PTC thermistor element and a varistor element on a single chip. CONSTITUTION: A PTC thermistor and varistor complex element and a method for manufacturing the same comprises an accumulated PTC thermistor area, an accumulated varistor area, and a plurality of outer electrode. The accumulated PTC thermistor area is formed with a plurality of thermistor layer and a plurality of inner electrode. The accumulated varistor area is formed with a plurality of varistor layer and a plurality of inner electrode. The outer electrodes is connected the inner electrodes of the each area. The outer electrode is formed at an end portion of the complex element. In the complex element, the accumulated PTC thermistor layer and the accumulated varistor layer are manufactured by using the same material.
申请公布号 KR20000018118(A) 申请公布日期 2000.04.06
申请号 KR20000001478 申请日期 2000.01.13
申请人 INNOCHIPS TECHNOLOGY 发明人 PARK, HO GEUN;UM, WOO SIK
分类号 H01C7/10;(IPC1-7):H01C7/10 主分类号 H01C7/10
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