| 发明名称 |
Junction device with lattice matching and method for fabricating the same |
| 摘要 |
<p>A superconducting thin film device comprises: a substrate (201); a thin film layer (202) provided on the substrate (201); a first superconducting thin film layer (203) provided as a lower intergrated circuit on the substrate; an interlayer insulator (205) provided on the lower integrated circuit; and a second superconducting thin film layer (206) provided as an upper integrated circuit on the interlayer insulator, an interlayer wiring (204) provided on the thin film layer (202) and being laterally adjacent to the lower and upper intergrated circuit; wherein the first and second superconducting thin film layer and the interlayer wiring are composed of LnBa2Cu3Ox wherein Ln represents yttrium or a lanthanide and x satisfies 6<x<7, the first and second superconducting thin film layer is c-axis oriented, and the interlayer wiring is a-axis oriented. <IMAGE></p> |
| 申请公布号 |
EP0582889(B1) |
申请公布日期 |
2000.04.05 |
| 申请号 |
EP19930111981 |
申请日期 |
1993.07.27 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
MUKAIDA, MASASHI;MIYAZAWA, SHINTARO;KOBAYASHI, JUNYA |
| 分类号 |
H01L39/22;H01L39/24;(IPC1-7):H01L39/22 |
主分类号 |
H01L39/22 |
| 代理机构 |
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