Process and apparatus for patterning a masked metal layer in a RF plasma, comprising substrate bias amplitude modulation,申请号EP19960300487-传众专利搜索

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发明名称	Process and apparatus for patterning a masked metal layer in a RF plasma, comprising substrate bias amplitude modulation
摘要
申请公布号	EP0734046(B1)	申请公布日期	2000.04.05
申请号	EP19960300487	申请日期	1996.01.24
申请人	APPLIED MATERIALS, INC.	发明人	HANAWA, HIROJI
分类号	H01L21/302;H01J37/32;H01L21/3065;H01L21/3213;(IPC1-7):H01J37/32;H01L21/00;H05H1/46;H01L21/321	主分类号	H01L21/302
代理机构		代理人
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