Semiconductor light emitting device and method for adjusting the luminous intensity thereof

摘要

A semiconductor light emitting device includes: a substrate; a ZnO buffer layer formed on the substrate; and a GaN-based light emitting layer formed on the ZnO buffer layer. The ZnO buffer layer has an average crystalline grain size of ZnO grains of about 0.45 mu m or more, or 0.12 mu m or less.