| 摘要 |
<p>In production of a semiconductor device using an SOI technology by an adhering method, a thin film with high thermal conductivity is formed between an insulating supporting substrate and a single-crystal silicon film formed thereon to enhance uniformity of a thermal distribution. The single-crystal silicon film is subjected to thermal treatment to improve uniformity of the thermal distribution and to enhance the adhering strength during an adhering step. When a peripheral circuit provided with switching elements showing a large amount of heat generation is formed of semiconductor devices having a thin film with high thermal conductivity to enhance the heat dissipating function, temperature rise during the operation is suppressed. When the thin film with high thermal conductivity is composed of a light shielding material, the light shielding function is also improved. Accordingly, temperature rise and deterioration of the characteristics of the switching element due to incident light can be suppressed. <IMAGE></p> |
