| 摘要 |
PURPOSE: A manufacturing method of a TFT(Thin Film Transistor) having a BBC(Buried Bus Coplanar) structure is provided to simplify impurity doping and activation processes when forming high doping regions used as source/drain electrode regions. CONSTITUTION: A manufacturing method of a TFT(Thin Film Transistor) having a BBC (Buried Bus Coplanar) structure comprises the steps of: forming source/drain electrodes on a substrate; forming an insulation layer covering the source/drain electrodes; forming an activation layer remained between the source/drain electrodes on the insulation layer; forming a gate electrode by inserting a gate insulation layer into a predetermined portion of the activation layer; forming a first and a second regions highly doped with impurities including hydrogen by using the gate electrode on the activation layer as a mask; forming a passivation layer to cover the entire surface; forming respective contact holes for exposing the source/drain electrodes and the first and the second high doping regions to the passivation layer and the insulation layer; and forming a first connection wire for connecting the source electrode with the second high doping region and a second connection wire for connecting the drain electrode with the first high doping region by covering the respective contact holes.
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