| 摘要 |
A semiconductor memory device comprises a memory cell array having a plurality of memory cells arranged in a row/column array, a plurality of word lines for selecting any row in the memory cell array, and a word line driver circuit for selectively activating/deactivating the word lines. The word line driver circuit has a first discharge circuit for discharging a charge on any word line to a first reference potential at a first stage for deactivating any word line and a second discharge circuit for discharging the word line which is discharged to the first reference potential to a second reference potential at a second stage which is lower than the first reference potential. In accordance with this circuit arrangement, a charge on the word line is not discharged all at one time and can be discharged stepwise. Therefore, only a smaller current drive capability is required than when the charge on the word line is discharged to the second reference potential all at one time.
|
