| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of unevenness in polishing amount due to a difference in relative velocity on a polishing inner face between a substrate to be polished and a polishing face of a polishing body by equalizing the relative velocity thereon among each position. SOLUTION: A flattening polishing device 1 is used to flatten an interlayer isolation film to be formed on a silicon wafer and has a polishing belt part 2, a substrate holder part 31, and a surface plate part 61. A substrate holder 51 has a holding part holding the silicon wafer, and a surface of the silicon wafer is held in such a way that it becomes parallel with a polishing face 3a of a polishing belt 3. By turning the silicon wafer intermittently every 90 degrees and bringing a direction of arrangement of elements along a direction of advance of the polishing belt 3 for polishing in this way, relative velocity between the silicon wafer and the polishing face 3a of the polishing belt 3 becomes uniform on an inner face completely at the time of polishing so that the uniformity of polishing amount on the inner face of the silicon wafer can be improved. |
