发明名称 SURFACE TREATING DEVICE AND SURFACE TREATMENT
摘要 PROBLEM TO BE SOLVED: To make it possible to introduce the flow ejected from a nozzle onto objects to be treated without the deactivation of radicals even if the flow does not turn to supersonic flow but to subsonic flow by accelerating the heat exchange of a carrier gas with gaseous raw material, thereby improving the conversion efficiency from the gaseous raw material to the radicals and tremendously increasing a surface treatment area, such as deposition surface area. SOLUTION: The free jets 14 of the carrier gas 12 formed as plasma are ejected from the one nozzle 2 of both nozzles 2 and 4 facing each other and the free jets 13 of the gaseous raw material 11 are ejected from the other nozzle 4. Both free jets 13 and 14 are brought into front surface-to-front surface collision against each other and the heat exchange is accelerated. The gaseous raw material 11 is pyrolyzed and activated by the heat exchange and the radicals of the gaseous raw material 11 are generated. Wall jets 15 including the activated gaseous raw material (radicals) are formed in the direction perpendicular to the ejection direction of the nozzles 2 and 4. These jets 15 are introduced onto the objects 7 to be treated, by which the films 8 are formed on the objects 7.
申请公布号 JP2000096248(A) 申请公布日期 2000.04.04
申请号 JP19980268406 申请日期 1998.09.22
申请人 KOMATSU LTD 发明人 KITAHASHI MASAMITSU;WAKAI HIDEYUKI
分类号 H01L21/302;C23C16/27;C23C16/50;C23C16/503;C23C16/513;H01L21/205;H01L21/3065;(IPC1-7):C23C16/503;H01L21/306 主分类号 H01L21/302
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