发明名称 |
Process for producing very thin semiconductor chips |
摘要 |
The novel process facilitates the production of very thin semiconductor chips with thicknesses down to a few mu m. The semiconductor chip is first of all arranged on contact surfaces, with the active side oriented toward the contact surfaces. The chip is then electrically connected to the contact surfaces via contact studs. Silicon is then removed from the exposed rear side of the semiconductor chip during a plasma etching process which has high selectivity with respect to the other materials.
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申请公布号 |
US6046073(A) |
申请公布日期 |
2000.04.04 |
申请号 |
US19980199847 |
申请日期 |
1998.11.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LANG, GUENTER;KROENINGER, WERNER |
分类号 |
H01L21/56;H01L29/06;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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