发明名称 |
Passivation technology combining improved adhesion in passivation and a scribe street without passivation |
摘要 |
An integrated circuit passivation layer including a first passivation layer portion of silicon nitride treated with nitrous oxide and a second passivation layer portion of polyimide. Also, a method of passivating an integrated circuit wafer including depositing a first passivation layer over the top surface of an integrated circuit wafer having a scribe street area between adjacent integrated circuit device portions, depositing a second passivation layer over the first passivation layer, and patterning the first passivation layer and the second passivation layer to expose the scribe street area.
|
申请公布号 |
US6046101(A) |
申请公布日期 |
2000.04.04 |
申请号 |
US19970197097 |
申请日期 |
1997.12.31 |
申请人 |
INTEL CORPORATION |
发明人 |
DASS, M. LAWRENCE A.;SESHAN, KRISHNA;GAETA, ISAURA |
分类号 |
H01L21/301;H01L21/312;H01L21/318;H01L23/31;(IPC1-7):H01L21/318;H01L21/70 |
主分类号 |
H01L21/301 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|