发明名称 |
Structure of a flash memory |
摘要 |
A structure of a flash memory is disclosed. The flash memory includes a common drain, a memory unit which has at least one memory cell, and a depletion mode selector transistor. The depletion mode selector transistor isolates the common drain and the memory unit. Two terminals the depletion mode selector transistor are coupled to the common drain and the memory unit, respectively.
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申请公布号 |
US6046938(A) |
申请公布日期 |
2000.04.04 |
申请号 |
US19980191326 |
申请日期 |
1998.11.13 |
申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
HONG, GARY;TING, WENCHI;KO, JOE |
分类号 |
G11C16/04;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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