| 摘要 |
A method for producing a semiconductor device comprises forming a film to be etched, an organic antireflective film and a resist mask on a substrate in this order; and before etching the film to be etched, dry-etching the organic antireflective film into a predetermined configuration by use of the resist mask and an etching gas containing chlorine atom and oxygen atom with maintaining the substrate at such a temperature that allows deposition of a substance produced by reaction of the organic antireflective film with chlorine atom contained in the etching gas.
|
