P-channel thin film transistor having a gate on the drain region of a field effect transistor

摘要

A device structure and a method of forming the structure comprising a thin film transistor (TFT) in a contact opening of a conventional field effect transistor (FET) by using alpha -silicon in the opening and the vertical portion of the alpha -silicon functioning as the channel for the TFT and both the FET and TFT sharing a common drain contact.