发明名称 Horizontal-type silicon-nitride furnace
摘要 A horizontal-type silicon-nitride furnace (HOSINF) having two tubes is provided. The HOSINF includes an outer tube and an inner tube. One end of the outer tube is coupled to a pump. The other end of the outer tube can be well sealed by a door through a flange. The inner tube is located inside the outer tube. The inner tube has a closed end and an opened end, in which the opened end is near to the door, and the closed end is near to the pump. The inner tube includes a first gas inlet and a second gas inlet. Desired reaction gases are flushed into the inner tube from the first inlet and the second inlet. The inner tube surrounds a paddle carrying several wafers, on which a silicon nitride layer is to be formed. The paddle is mounted on the door. A heater is located on a side periphery of the outer tube.
申请公布号 US6045619(A) 申请公布日期 2000.04.04
申请号 US19980212006 申请日期 1998.12.15
申请人 UNITED MICROELECTRONICS CORP. 发明人 TAI, WEN-KUANG;CHU, KUO-TUNG;HUANG, KUO-LIANG
分类号 C23C16/44;(IPC1-7):C23C16/00 主分类号 C23C16/44
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