发明名称 |
Horizontal-type silicon-nitride furnace |
摘要 |
A horizontal-type silicon-nitride furnace (HOSINF) having two tubes is provided. The HOSINF includes an outer tube and an inner tube. One end of the outer tube is coupled to a pump. The other end of the outer tube can be well sealed by a door through a flange. The inner tube is located inside the outer tube. The inner tube has a closed end and an opened end, in which the opened end is near to the door, and the closed end is near to the pump. The inner tube includes a first gas inlet and a second gas inlet. Desired reaction gases are flushed into the inner tube from the first inlet and the second inlet. The inner tube surrounds a paddle carrying several wafers, on which a silicon nitride layer is to be formed. The paddle is mounted on the door. A heater is located on a side periphery of the outer tube.
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申请公布号 |
US6045619(A) |
申请公布日期 |
2000.04.04 |
申请号 |
US19980212006 |
申请日期 |
1998.12.15 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TAI, WEN-KUANG;CHU, KUO-TUNG;HUANG, KUO-LIANG |
分类号 |
C23C16/44;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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