发明名称 RF-driven semiconductor device
摘要 An RF-driven semiconductor chip is die-bonded to the top face of a metal plate. The semiconductor chip and the metal plate are molded together with outer leads in a plastic package in the form of a rectangular parallelepiped. The metal plate is exposed at the back face of the plastic package. The metal plate is not protruding from the front and rear side faces of the plastic package. The front and rear side faces of the metal plate are flush with the front and rear side faces of the plastic package and partially exposed at the front and rear side faces of the plastic package. The front and rear portions of the plastic package are centrally formed with respective cutaway portions each in the form of a rectangular parallelepiped. The top face of the metal plate is exposed in the cutaway portions formed centrally in the front and rear portions of the plastic package to form solder portions.
申请公布号 US6046501(A) 申请公布日期 2000.04.04
申请号 US19970942443 申请日期 1997.10.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ISHIKAWA, OSAMU;YOKOYAMA, TAKAHIRO;KUNIHISA, TAKETO;NISHIJIMA, MASAAKI;YAMAMOTO, SHINJI;ITOH, JUNJI;FUJIWARA, TOSHIO;MURAMATSU, KAORU
分类号 H01L23/31;H01L23/433;H01L23/495;H01L23/66;H05K1/02;H05K3/34;(IPC1-7):H01L23/04;H01L23/34 主分类号 H01L23/31
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