| 发明名称 |
Semiconductor device having conductive layer and manufacturing method thereof |
| 摘要 |
A semiconductor device allowing the manufacturing process to be simplified and fine structures therein to be readily formed and a manufacturing method thereof are provided. In the semiconductor device, a conductive layer is used as a mask during etching for forming a first opening.
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| 申请公布号 |
US6046488(A) |
申请公布日期 |
2000.04.04 |
| 申请号 |
US19970985218 |
申请日期 |
1997.12.04 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION |
发明人 |
KAWASAKI, TAKAHIRO;HARADA, SHIGERU;TOBIMATSU, HIROSHI |
| 分类号 |
H01L21/82;H01L21/311;H01L21/768;H01L23/525;H01L23/58;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/82 |
| 代理机构 |
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