发明名称 |
Method for measuring the kink effect of a semiconductor device |
摘要 |
A method for measuring the extent of the kink effect of a transistor is disclosed herein. The aforementioned method includes the following steps. The first, generate a simulated drain current versus a gate voltage according to the transistor. Secondary, generate a drain current versus the gate voltage. Finally, integrate a difference between the simulated drain current and the drain current by the gate voltage.
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申请公布号 |
US6046601(A) |
申请公布日期 |
2000.04.04 |
申请号 |
US19980106745 |
申请日期 |
1998.06.30 |
申请人 |
UNITED SEMICONDUCTOR CIRCUIT CORP. |
发明人 |
YEH, MENG-LIN;FANG, YANG-HUI |
分类号 |
G01R31/26;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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