METHOD FOR MANUFACTURING OXIDATION FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an oxide layer on a semiconductor is provided to improve a quality of an oxide layer by performing a low temperature annealing process in a temperature falling process. CONSTITUTION: A boat including a multitude of wafer is loaded on a process chamber of 350 to 450 deg.C. The temperature of the process chamber is maintained at 850 to 1050 deg.C after the temperature of the process chamber is risen according to a constant ratio. An oxide layer is formed on the wafer under the temperature of 850 to 1050 deg.C. The temperature of the process chamber is fallen from 850-1050 deg.C to 350-450 deg.C according to a constant ratio. A process for falling the temperature comprises the first step of falling the temperature of 850-1050 deg.C to 600-0700 deg.C and the second step of falling the temperature of 600-0700 deg.C to 150-450 deg.C.