MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent a short-circuit of a meal line and a void phenomenon within a contact hole by growing selectively a tungsten. CONSTITUTION: A conductive material(4) is formed on a semiconductor substrate(1). An insulating oxide layer(5) is formed on the whole structure. A polysilicon layer(6) is formed on the insulating oxide layer(5). The first and the second contact holes are formed by etching partially the polysilicon layer(6) and the insulating oxide layer(5). A tungsten(7) is applied selectively on the whole structure. A tungsten spacer(7A) is formed at sidewalls of the first and the second contact holes. The third and the fourth contact holes are formed by etching the exposed insulating oxide layer(5). The tungsten(9) is grown and patterned on the whole structure.