METHOD OF FABRICATING SEMICONDUCTOR DEVICE CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve an electric characteristic of a capacitor by restricting a degradation phenomenon of a diffusion barrier. CONSTITUTION: An interlayer dielectric(12) having a storage electrode contact plug(14) formed with a polysilicon layer is formed on an upper portion of a semiconductor substrate(11). A tungsten nitride layer(15) as a diffusion barrier is formed on a surface of the whole structure by using an LPCVD(Low-Pressure Chemical Vapor Deposition) method. A capacitor is formed by forming a lower electrode(16), a dielectric layer(17), and an upper electrode. In the process, a tungsten silicide layer is formed by reacting the tungsten nitride layer(15) with the storage electrode contact plug(14).