FABRICATION METHOD OF FLASH MEMORY CELL

摘要

PURPOSE: A method for manufacturing a flash memory cell is provided to simplify a manufacturing process by patterning simultaneously a floating gate and a select gate. CONSTITUTION: A gate oxide layer(12) and the first polysilicon layer are formed on a silicon substrate(11). A floating gate(13A) and a select gate(13B) are formed by patterning the first polysilicon layer. An insulating layer spacer(16) is formed at both sidewalls of the floating gate(13A) and the select gate(13B). A dielectric layer(14) and the second polysilicon layer are laminated sequentially on an upper portion of the whole structure. A control gate(15A) is formed on the floating gate by patterning the second polysilicon layer. A junction region(19) is formed by implanting dopant ions into the silicon substrate(11).