发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus with a good throughput at a high-speed treatment, in which strict temperature control can be realized as compared with a conventional case and a circuit pattern can be transfered accurately. SOLUTION: A mechanism for temperature control of a wafer put in a buffer cassette BR in an interface part includes an air temperature control mechanism 101 for BR temperature control and a BR temperature control unit 102 for controlling the air temperature control mechanism 101. In addition, a control signal and a temperature detection signal from an exposure-apparatus temperature control unit 203 to a substrate temperature control mechanism 202 for the exposure apparatus are entered in the BR temperature control unit 102. On the basis of the tendency of the signal, the control signal to the air temperature control mechanism 101 for BR temperature control is adjusted.
申请公布号 JP2000091226(A) 申请公布日期 2000.03.31
申请号 JP19990195568 申请日期 1999.07.09
申请人 TOKYO ELECTRON LTD 发明人 UEDA KAZUNARI;MATSUSHITA MICHIAKI;ITO KAZUHIKO;YAMAGUCHI TADAYUKI
分类号 H01L21/027;G03F7/20;G03F7/30;(IPC1-7):H01L21/027 主分类号 H01L21/027
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