| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor light emitting element by which a protective film can be divided without etching the film nor giving any damage to the film at the time of breaking (cutting) a wafer into chips by dicing. SOLUTION: Semiconductor layers which contain an n-type layer 3 and a p-type layer 5 and form a light emitting layer are laminated upon a wafer-like substrate 1 and the n-type layer 3 is exposed by removing part of the laminated semiconductor layers. Then a p-side electrode 8 and an n-side electrode 9 are respectively formed on the p-type layer 5 and n-type layer 3 exposed on the surface of the laminated semiconductor layers and electrically connected to the layers 5 and 3. After the formation of the electrodes 8 and 9, the semiconductor layers laminated upon the substrate 1 are diced to the substrate 1 along a dicing line along which the substrate 1 is divided into the chips 11 and 12. Then a protective film 10 is formed on the exposed semiconductor layers so that the electrodes 8 and 9 may be exposed and the substrate 1 is divided into the chips 11 and 12 from the dicing line. |
