| 摘要 |
PROBLEM TO BE SOLVED: To increase the ultraviolet ray emitting efficiency by forming a light emitting layer of a multiple quantum well structure by depositing a barrier layer and a well layer alternately and forming the barrier layer from AlxGa1-xN. SOLUTION: On a substrate 11, a buffer layer 12 is formed. Thereon, an n-type clad and n-type contact layer 13 is formed. Then, a stress relaxing layer 14 is formed on the n-type clad and n-type contact layer 13. On the layer 14, a light emitting layer of a multiple quantum well structure is formed which is made by alternately depositing a barrier layer 151 formed of AlxGa1-xN (0<x<=0.18) and a well layer 152. On the light emitting layer 15, a p-type clad layer 16 is formed. Futhermore, a p-type contact layer 17 is formed on the p-type clad layer 16. Due to this structure, the ultraviolet ray emitting efficiency of a gallium nitride-based compound semiconductor element can be increased. |
