| 摘要 |
PROBLEM TO BE SOLVED: To uniformly etch a thin film by reducing the in-plane rate distribution of the etching by using a pattern that contains openings which are not coated with a resist in a specific range over the whole surface of a substrate. SOLUTION: After a protective film is formed on a glass substrate, an amorphous Si film is formed on the protective film. After the amorphous Si is grown in a slide phase, the amorphous Si is patterned into an island-like state. Then a silicon oxide film is formed as a gate insulating film, and a gate electrode and an MoW film are formed through sputtering. After the MoW is formed, a resist pattern in which an extra pattern having a representative size of 50μm is embedded without gaps within 300μm or less is formed between a pixel section and a peripheral circuit section. Because of the resist pattern, the etching rate uniformity of the dry-etching performed on the MoW film can be secured within±10% over the whole surface of the glass substrate. Thereafter, the MoW film is subjected to dry etching. Therefore, the MoW film can be dry- etched with sufficient uniformity.
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