| 摘要 |
PROBLEM TO BE SOLVED: To eliminate ununiformity of the width (base resistance) of a base region due to alignment deviation. SOLUTION: A silicon nitride film 32 having apertures 32a and 32b is formed on an N- epitaxial layer 2. After the aperture 32a is covered with a resist, ion implantation is performed through the aperture 32b to form a p-type deep base layer 9. Moreover, after the resist is removed, IOCOS oxidation is performed through the aperture 32a using the film 32 as a mask to form an IOOCS oxide film 37a. A base region 8 and a source region are formed using this film 37a as a mask. In such a way, as the layer 9 and the film 37a are provided so that the formation positions of the layer 9 and the film 37a are regulated by the one mask, the source and base regions which are formed using the film 37a as the mask can be formed so that the source and base regions are formed at the self-alignment positions with the layer 9.
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