发明名称 SUBSTRATE PROCESSOR
摘要 PROBLEM TO BE SOLVED: To provide a substrate processor which can prevent deposition of pollution substances onto a substrate when a gas is supplied to the substrate, after the substrate is immersed into a processing bath containing a processing solution for its surface treatment while the processing solution overflows from the processing bath. SOLUTION: A processing bath for immersing treatment of a substrate W is provided to be supported within an outer bath 10 by a supporting mechanism 30 from its side direction. Caps 50 for shielding upper parts of the supporting mechanism 30 are provided within the outer bath 10. Upon the immersing treatment of the substrate W, the treatment proceeds while a processing solution overflows from a processing bath 20, during which part of overflowed processing solution stays in the mechanism 30 to cause pollution substance to be deposited in the mechanism 30. At this time, a gas flow supplied from a gas supply nozzle 12 is interrupted by the caps 50 and thus will not be blown directly against the mechanism 30. Further, the gas flow containing the pollution substances is also interrupted by the caps 50 and thus will not reach the vicinity of the substrate W.
申请公布号 JP2000091286(A) 申请公布日期 2000.03.31
申请号 JP19980262779 申请日期 1998.09.17
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 MOTOMURA MASAHIRO;TOMITA TAKESHI
分类号 B08B3/04;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B3/04
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