| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a pattern having excellent adhesion property of a chemically amplifying type resist on a silicon nitride film in a short time. SOLUTION: A silicon oxide film or silicon oxide nitride film is formed on the surface of a silicon nitride film 12 only when the silicon nitride film 12 has the thickness to cause undercut of the chemically amplifying type resist 13 on the silicon nitride film 12 by lithographic patterning, so as to suppress undercut in the chemically amplifying resist 13 after patterning. Thereby, the time required for formation is short compared with a process in which a silicon oxide film or silicon oxide nitride film is formed without depending on the thickness of the silicon nitride film.</p> |
