发明名称 NEGATIVE PHOTORESIST COMPOSITION
摘要 <p>PROBLEM TO BE SOLVED: To form a resist pattern superior in sensitivity and resolution and good in the sectional pattern form of an isolated resist pattern and near to a rectangle viewed from right above and from right beside by incorporating each specified alkali-soluble resin and N-sulfonyloxyimide compound and a cross-linking agent. SOLUTION: This negative photoresist composition to be used comprises (A) the alkali-soluble resin composed of a copolymer of p-hydroxystyrene and m-hydroxystyrene, (B) an N-sulfonyloxyimide compound capable of releasing an acid by irradiation with radiation, and (C) the cross-linking agent. The copolymer as the alkali-soluble resin of component (A) is, preferably, a copolymer of 20-80 mol% p-hydroxystyrene and 80-20 mol% m-hydroxystyrene, and the N-sulfonyloxyimide compound as the acid-generator of component (B) is the ester of the N-hydroxyimide compound with a sulfonic acid, and the cross- linking agent of component (C) is not especially limited.</p>
申请公布号 JP2000089459(A) 申请公布日期 2000.03.31
申请号 JP19980256635 申请日期 1998.09.10
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KANEKO FUMITAKE;FUJIMURA SATOSHI;MIYAIRI YOSHIKAZU;TACHIKAWA TOSHIKAZU;KOBAYASHI MASAICHI
分类号 H01L21/027;G03F7/027;G03F7/038 主分类号 H01L21/027
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