摘要 |
<p>PROBLEM TO BE SOLVED: To form a resist pattern superior in sensitivity and resolution and good in the sectional pattern form of an isolated resist pattern and near to a rectangle viewed from right above and from right beside by incorporating each specified alkali-soluble resin and N-sulfonyloxyimide compound and a cross-linking agent. SOLUTION: This negative photoresist composition to be used comprises (A) the alkali-soluble resin composed of a copolymer of p-hydroxystyrene and m-hydroxystyrene, (B) an N-sulfonyloxyimide compound capable of releasing an acid by irradiation with radiation, and (C) the cross-linking agent. The copolymer as the alkali-soluble resin of component (A) is, preferably, a copolymer of 20-80 mol% p-hydroxystyrene and 80-20 mol% m-hydroxystyrene, and the N-sulfonyloxyimide compound as the acid-generator of component (B) is the ester of the N-hydroxyimide compound with a sulfonic acid, and the cross- linking agent of component (C) is not especially limited.</p> |