| 摘要 |
PROBLEM TO BE SOLVED: To normally operate a semiconductor storage device having a column redundant circuit even if many input and output bits are used. SOLUTION: A semiconductor storage device disclosed is provided with memory cell columns 211 to 21n-1 consisting of a plurality of memory cells, redundant memory cells 21n, input/output lines 241 to 24n-1, switches 231 to 23n-1 provided corresponding to the input/output lines 241, to 24n-1 to connect any one of the adjacent memory cell column 21 and the corresponding input/ output line 24 depending on a control voltage, fuses 251 to 25n-1 for supplying the power source voltage Vcc to one end of the serial connection, fixing the potential of the other end to the power source voltage Vcc or the ground GND and respectively supplying the voltage of connecting points to the switches 231 to 23n-1 as the control voltage and control voltage fixing circuits 301 to 30(n-3)/2, 31(n-1)/2 to 31(n-1 for fixing the control voltage of the switches 231 to 23n-1 to the 'H' level or 'L' level.
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