| 摘要 |
PROBLEM TO BE SOLVED: To enhance current drive capability of a field-effect transistor. SOLUTION: Source drain diffused layers 3a, 3b are formed so as to hold a gate electrode 5a on a silicon substrate 1. Sidewall oxide films 6a, 6b are formed on both sides of the gate electrode 5a. Besides, cutouts 8a, 8b are formed in the extension parts E below the sidewall oxide films 6a, 6b. Furthermore, source drain electrodes 7a, 7b are formed as if filling up the waney parts 8a, 8b.
|
