| 摘要 |
PROBLEM TO BE SOLVED: To prevent metal contamination by cleaning the surface of a gate electrode with cleaning liquid to which chelating agent which forms complex with metal constituting silicide is added. SOLUTION: An element isolating region constituted of an insulating film is formed on a silicon substrate 101. A gate electrode 105 containing a silicide 110 is formed on a specified region surrounded by the element isolating region. A source region 108 and a drain region 109 are formed by implanting impurities. An interlayer film 111 is formed on the gate electrode 105 the source region 108 and the drain region 109. Contact holes 113a, 113b which reach the gate electrode 105 are formed in the interlayer film 111. The surface of the gate electrode 105 is cleaned with cleaning liquid to which chelating agent which forms complex with metal constituting the silicide 110 is added.
|
