发明名称 ION BEAM IMPLANTATION METHOD AND DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide an ion beam implantation device capable of preventing damage of an ion beam current detection means and exactly implanting ion beam. SOLUTION: An amount of wear of an ion beam current detecting plate at a replacement time for the ion beam current detecting plate is preliminarily set and inputted to a set value input circuit 10 of an ion beam current detecting plate wear monitor 8. By implanting operation of an ion beam, an amount of wear of the ion beam current detecting plate is integrated in an integrating circuit 11 from ion beam current amount converted into a parameter signal in an arithmetic circuit 9, time when the ion beam current detecting plate receives the ion beam, an accelerating voltage value of the ion beam and an atomic mass number of ion. Based on the calculated numerical value, a display on a display device 13 is performed. When the calculated numerical value becomes the set and inputted numerical value or more, a replacement time is notified by a sound of a predictive detection buzzer 14 and luminescence of a predictive detection display lamp 15. As a result, an amount of wear of the ion beam current detecting plate can be surely predicted and detected.
申请公布号 JP2000090873(A) 申请公布日期 2000.03.31
申请号 JP19980279304 申请日期 1998.09.16
申请人 NEC YAMAGATA LTD 发明人 ITO KENICHI
分类号 H01J37/317;G01T1/29;G21K5/04;H01J37/04;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J37/317
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