| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a thin film semiconductor device of high performance and high reliability at a relatively low temperature by depositing an insulation film continuously through plasma chemical vapor deposition after irradiating a semiconductor film with plasma consisting of mixture gas of rare gas and oxidizing gas. SOLUTION: First as a first process, a semiconductor film of polycrystalline silicon is formed on an insulating substance of a layer insulation film, etc., of a glass substrate. Then, as a second process, an insulation film is formed on a semiconductor film at about 450 deg.C or lower. The insulating film is formed by forming a first plasma oxide film in a semiconductor film surface layer part, by irradiating a semiconductor film formed in the first process with plasma consisting of mixture gas of rare gas such as helium and oxidizing gas such as oxygen and furthermore depositing a second deposition insulation film continuously by plasma chemical vapor deposition. In this way, a quality interface transition region and high performance for a thin-film semiconductor device can be realized readily.
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