| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for working micro-device by which a thin piezoelectric film can be formed easily on a silicon substrate and a structure and, accordingly, a high-performance piezoelectric transducer element can be manufactured stably by combining an aimed piezoelectric material and working of a silicon micro-device. SOLUTION: Before a thin piezoelectric film depositing process (S5), an etching stopper layer 2 is formed on a silicon substrate (S1) and, after a thin piezoelectric film 7 is deposited (S5), a prescribed spot of the silicon substrate 1 is etched (S7). It is preferable, in addition, to form the etching stopper layer 2 so that the layer 2 may become a tensile stress layer (S1). |
