发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and its manufacturing method by which a light emitting diode or a semiconductor laser can emit a yellow light or a red light by using Ga1-xInxN as a light emitting material as well as lights having various wavelengths by using a nitride-based III-V compound semiconductor containing Ga1-xInxN as a light emitting material. SOLUTION: A semiconductor light emitting element using a nitride-based III-V group compound semiconductor uses as a light emitting material a nitride- based III-V compound semiconductor doped with a rare-earth element. For example, a GaN-based semiconductor light emitting element uses an Eu-doped Ga1-xInxN active layer 6. The concentration of rare-earth element in the nitride- based III-V compound semiconductor is 1×1018-1×1021 cm-3. The growth temperature of a light emitting layer is 500-800 deg.C. |
申请公布号 |
JP2000091703(A) |
申请公布日期 |
2000.03.31 |
申请号 |
JP19980258014 |
申请日期 |
1998.09.11 |
申请人 |
SONY CORP |
发明人 |
AKIMOTO KATSUHIRO;MARUYAMA TAKAHIRO;MORISHIMA SHINICHI;MIYAJIMA TAKAO |
分类号 |
H01L33/32;H01S5/00;H01S5/323 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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