| 摘要 |
PROBLEM TO BE SOLVED: To eliminate variance and deterioration in characteristics and to prevent heat radiation from deteriorating owing to a wire-bonding connection between a semiconductor device and a transmission line, because of a step resulting from the thickness of the semiconductor substrate. SOLUTION: With this manufacturing method, a semiconductor substrate 28 is selectively removed after an insulating substrate (sapphire substrate 27) and the semiconductor substrate 28, having a layer structure (epitaxial layer 29) formed are adhered with the layer structure on an adhesion surface side, and the part of the remaining layer structure is used to form an island-shaped semiconductor substrate 31-1 on the insulating substrate. Transmission lines 32 and 33 are formed in a region on the insulating substrate which is other than the semiconductor device, and wires 34 and 35 connecting the semiconductor device and transmission lines are formed. After the semiconductor substrate where the layer structure is formed and the insulating substrate are adhered, the semiconductor substrate is removed to enable actualizing a structure, having a semiconductor layer of about several microns in thickness left on the insulating substrate. With respect to the semiconductor layer, a semiconductor device, transmission lines, and wirings can be formed consistently by a normal semiconductor process. |
