| 摘要 |
PROBLEM TO BE SOLVED: To decrease the difference between the max. and min. Eth of a resist corresponding to changes in the film thickness of a base transparent film and to provide a forming method with improved dimensional controlling property by controlling the film thickness of the resist and film thickness of an antireflection film. SOLUTION: In this method to form a resist pattern having high dimensional controlling property, a base transparent film is formed on a semiconductor substrate, and a resist film is formed thereon to the thickness controlled to m.λ/2n2 (wherein λ is the wavelength of exposure light, n2 is the refractive index of the resist film, and (m) is an integer). Then an antireflection film composed of a water-soluble compd. is applied with the film thickness controlled to λ/4n1 (wherein n1 is the refractive index of the antireflection film) on the resist film. Then the resist film is exposed/developed through the antireflection film. |
