AMMONIA FOR MANUFACTURING GaN COMPOUND SEMICONDUCTOR AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN compound semiconductor, by which a GaN compound semiconductor having an excellent emitting property can be positively manufactured. SOLUTION: Ammonia for manufacturing a GaN compound semiconductor is filled into a container 18 in a state in which at least a part of the compound is liquid. Ammonia of the liquid phase has a moisture concentration of 0.5 volppm or less, that is measured by a Fourier transform infrared spectral method (FT-IR). The Ammonia is applied in a state of gas into a reacting chamber 11 including a substrate 1, and a layer made of the GaN compound is formed on the substrate 1 by using the Ammonia as a material.