SOLID IMAGE PICKUP DEVICE

摘要

PROBLEM TO BE SOLVED: To enable the charge in a photodiode layer at low voltage to be read out even if a surface shield structure is adopted in a CMOS image sensor. SOLUTION: For example, a surface shield layer 17 is formed separate from the end of a read out gate 14 on the surface of a photodiode layer 16. Next, an impurity region 21 in higher concentration than that of the photodiode layer 16 is formed between this surface shield layer 17 and the read out gate 14. Through these procedures, the formation of potential barrier by the surface shield layer 17 is suppressed for facilitating reading of the charge accumulated in the photodiode layer 16, thereby enabling the read out voltage to be lowered.