| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is decreased in resistance with good controllability and further improved in the integration level. SOLUTION: This semiconductor device includes a read-only semiconductor storage device, comprising diffusion regions 22 as source/drain regions arrayed on the top surface layer of a semiconductor device 21 in parallel to one another, 1st gate electrodes 24 which are arrayed on the semiconductor substrate 21 in parallel to one another across a 1st gate insulating film 23, while crossing the diffusion regions 22, and 2nd gate electrodes 26 formed on the semiconductor substrate 21 between the 1st gate electrodes 24 across a 2nd gate insulating film 25. The 2nd gate electrodes 26 contains high fusion-point metal in their top layers, and the surfaces of the 1st gate electrodes 23 and 2nd gate electrodes 26 are flat, respectively. |
